The F10-HC measures outer hardcoat layers and inner anti-fog layers for the polycarbonate lenses and scratch-resistant coatings on the base reflector plate. The F10-HC with the handheld contact probe is ideal for the coating lab as a quality check on the coating process.

Electronic device failure analysis (EDFA) is used for wafer backside thinning, where the thinned silicon substrate is transmissive at near-infrared (NIR) wavelengths. The F20-NIR can measure thinned silicon, and the F3-sX can measure thick layers, up to 1.5mm.

Liquid crystal displays (LCDs) and OLEDs rely on transparent conductive oxides (TCOs) to transport current, and it is important to now the thickness of the layers that form the display. For LCDs, the F-series systems can measure the polyimide and LC layers, while for OLEDs, they measure the emitting, injecting and encapsulation layers.

Liquid crystal displays (LCDs) and OLEDs rely on transparent conductive oxides (TCOs) to transport current, and it is important to know the thickness of the layers that form the display. For LCDs, the F-series systems can measure the polyimide and LC layers, while for OLEDs, they measure the emitting, injecting and encapsulation layers.

Though simple and quick, spin coating SU-8 can be an inaccurate method for yielding a desired thickness. Since exposure time is dependent on resist thickness, and since positive and negative photoresists can be used in conjunction to create complex multilayer structures, accurate measurement of the thickness of each layer becomes extremely important.

Porous semiconductors (PS) are used in applications ranging from optical devices to gas sensors, and properties impacting PS performance include layer thickness and porosity, either in single or periodic multilayers. Other important properties relate to processed PS layers, such as the fraction of impregnated materials and the amount of adsorbed molecules in sensing devices.

Silicon wafer thickness can be easily and quickly measured using Filmetrics^® spectral reflectometers with high resolution near-infrared (NIR) spectrometers. The Filmetrics F3-sX system family uses NIR light to measure layer thickness, even many layers that are visibly opaque, such as semiconductors.

A typical OLED structure includes multiple specialized layers: Hole Injection Layers, Hole Transport Layers and Recombination/ Emission layers. All these layers contain optically complex organic molecules. OLED properties also enable flexible displays, which may require measurement on highly birefringent substrates such as PET. The Filmetrics^® F20-UV and F40-UV instruments offer inexpensive, robust and non-invasive metrology for simple prototype devices to fully pixelated displays.

Coatings continue to play a critical role in eyeglass performance, appearance and durability. The Filmetrics F10-AR is the first instrument designed for simple, affordable testing of ophthalmic anti-reflection (AR) coatings and hardcoats, enabling line operators to make conclusive readings in seconds and with only minutes of training.

The Filmetrics^® F20, F40 and F3-CS Thin-Film Analyzers are used for thickness and uniformity measurement of parylene coatings, which are widely used in the biomedical industry due to their unique properties.

The Filmetrics^® F20 and F40 Thin-Film Analyzers use spectral reflectance technology for layer thickness measurement of different types of coatings used on medical devices. This discussion includes thickness measurement of a pharmacological coating on a medical stent, thickness of a polymer wire coating, and angioplasty balloon wall thickness.

The Filmetrics^® F10-RT-UVX was used to measure a multilayer dielectric stack of unknown materials, resolving not only the number of layers and the index of refraction of the high index material, but the thickness of each individual layer.

The Filmetrics^® F10-RT Thin-Film Analyzer was used to measure the index of refraction of graphene, using the simultaneous capture of reflectance and transmittance spectra. The F50 thin film mapping tool was used to measure and map graphene monolayer and bilayer uniformity across an entire wafer.